Utshintsho olukhulu kwi-photovoltaics lufikile.Ngubani oza kuba yiteknoloji elandelayo eqhelekileyo?

U-2022 ngunyaka ozele yimiceli mngeni yehlabathi liphela.Ubhubhani weNtshatsheli eNtsha awukapheli ngokupheleleyo, kwaye intlekele eRussia naseUkraine ilandele.Kule meko inzima neguquguqukayo yamazwe ngamazwe, imfuno yokhuseleko lwamandla kuwo onke amazwe ehlabathi ikhula imihla ngemihla.

Ukuze ukwazi ukujamelana ne-gap yamandla ekhulayo kwixesha elizayo, imboni ye-photovoltaic iye yatsala ukukhula okuqhumayo.Kwangaxeshanye, amashishini ahlukeneyo akwakhuthaza ngenkuthalo isizukulwana esitsha setekhnoloji yeeseli ze-photovoltaic ukubamba indawo ephezulu yentengiso.

Ngaphambi kokuhlalutya indlela yokubuyisela iteknoloji yeeseli, kufuneka siqonde umgaqo wokuvelisa amandla e-photovoltaic.

Ukuveliswa kwamandla e-Photovoltaic bubuchwepheshe obusebenzisa umphumo we-photovoltaic we-interface ye-semiconductor ukuguqula ngokuthe ngqo amandla okukhanya kumandla ombane.Umgaqo wayo oyintloko yimpembelelo ye-photoelectric ye-semiconductor: into enokwenzeka umahluko phakathi kwe-heterogeneous semiconductor okanye iindawo ezahlukeneyo ze-semiconductor kunye ne-metal bonding ebangelwa ukukhanya.

Xa iifotoni zikhanya phezu kwesinyithi, amandla anokufunxwa yi-electron ekwisinyithi, kwaye i-electron inokuphuncuka kumphezulu wesinyithi ize ibe yifotoelectron.Iiathom zeSilicon zineelektroni ezine zangaphandle.Ukuba iiathom ze-phosphorus ezinee-electron ezintlanu zangaphandle zifakwe kwizinto ze-silicon, ii-wafers ze-silicon ze-N zinokwenziwa;Ukuba iiathom ze-boron ezinee-electron ezintathu zangaphandle zifakwe kwizinto zesilicon, i-P-type ye-silicon chip inokwakheka."

Uhlobo lwe-P yebhetri ye-chip kunye nohlobo lwe-N lwe-chip lulungiswe ngokulandelelana ngohlobo lwe-silicon chip kunye nohlobo lwe-N lwe-silicon chip ngokusebenzisa ubugcisa obahlukeneyo.

Ngaphambi kuka-2015, i-aluminium back field (BSF) iitshiphusi zebhetri zathatha phantse yonke imarike.

I-Aluminiyamu ibhetri ye-backfield yeyona ndlela yebhetri yesiqhelo: emva kokulungiswa kwe-PN junction ye-crystalline silicon photovoltaic cell, umaleko wefilimu ye-aluminium ifakwe kwi-backlight surface ye-silicon chip ukulungiselela i-P + layer, ngaloo ndlela yenza i-aluminium back field. , ukwenza indawo yombane ephezulu kunye nesezantsi, kunye nokuphucula i-voltage yesiphaluka evulekileyo.

Nangona kunjalo, ukuxhathisa kwi-irradiation ye-aluminium ngasemva kwebhetri imbi.Ngexesha elifanayo, ukuguqulwa komda walo osebenzayo yi-20% kuphela, kwaye izinga lokuguqulwa kwangempela liphantsi.Nangona kwiminyaka yakutshanje, ishishini liye layiphucula inkqubo yebhetri ye-BSF, kodwa ngenxa yemida yayo yendalo, uphuculo alukhulu, nto leyo ekwasisizathu sokuba imiselwe ukuba itshintshwe.

Emva kwe2015, isabelo semarike yeetshiphusi zebhetri zePerc zonyuke ngokukhawuleza.

I-chip yebhetri yePerc iphuculwe ukusuka kwi-aluminiyam yesiqhelo yasemva kwebhetri ye-chip.Ngokufakela i-dielectric passivation layer emva kwebhetri, ilahleko ye-photoelectric iyancitshiswa ngempumelelo kwaye ukusebenza kakuhle kokuguqulwa kuphuculwe.

Unyaka we-2015 yayingunyaka wokuqala wokuguqulwa kweteknoloji yeeseli ze-photovoltaic.Kulo nyaka, ukuthengiswa kweteknoloji yePerc kwagqitywa, kunye nokusebenza kakuhle kwemveliso yeebhetri kugqithise ukuguqulwa kokuguqulwa kweebhetri ze-aluminium emva kwe-20% okokuqala ngqa, ukungena ngokusemthethweni kwinqanaba lemveliso yobuninzi.

Ukuphumelela kwenguqu kubonisa inzuzo ephezulu kwezoqoqosho.Emva kokuveliswa kobuninzi, isabelo semarike yeetshiphusi zebhetri yePerc inyuke ngokukhawuleza kwaye yangena kwinqanaba lokukhula ngokukhawuleza.Isabelo semarike sinyuke ukusuka kwi-10.0% ngo-2016 ukuya kwi-91.2% ngo-2021. Okwangoku, iye yaba yeyona nto iphambili yeteknoloji yokulungiselela i-chip yebhetri kwimarike.

Ngokumalunga nokusebenza kakuhle koguqulo, umndilili wokuguqulwa kokusebenza komgangatho omkhulu weebhetri zePerc ngo-2021 uya kufikelela kwi-23.1%, i-0.3% ephezulu kunoko ngo-2020.

Ngokombono wobuchule bomda wethiyori, ngokobalo lweSolar Energy Research Institute, umda wethiyori osebenzayo weP-type monocrystalline silicon Perc ibhetri yi-24.5%, ekufutshane kakhulu kumda wethiyori ngokufanelekileyo, kwaye kukho umda. indawo yokuphucula kwixesha elizayo.

Kodwa okwangoku, iPerc yeyona nto iphambili yetekhnoloji yebhetri.Ngokutsho kwe-CPI, ngo-2022, ubuninzi bemveliso yeebhetri ze-PERC ziya kufikelela kwi-23.3%, amandla okuvelisa aya kuphendula ngaphezu kwe-80%, kwaye isabelo semarike siya kuhlala sibeka kuqala.

Ibhetri ye-N yangoku ineenzuzo ezicacileyo ekusebenzeni kokuguqulwa kwaye iya kuba yinto ephambili kwisizukulwana esilandelayo.

Umgaqo osebenzayo we-N-uhlobo lwebhetri chip iye yaziswa ngaphambili.Akukho mahluko uyimfuneko phakathi kwesiseko sethiyori yeentlobo ezimbini zeebhetri.Nangona kunjalo, ngenxa yomahluko kwitekhnoloji yokusasaza i-B kunye ne-P kule nkulungwane, bajongana nemiceli mngeni eyahlukeneyo kunye namathemba ophuhliso kwimveliso yamashishini.

Inkqubo yokulungiswa kwebhetri yohlobo lwe-P ilula kwaye ixabiso liphantsi, kodwa kukho umsantsa othile phakathi kwebhetri yohlobo lwe-P kunye nohlobo lwebhetri lwe-N ngokwemigaqo yokuguqulwa kakuhle.Inkqubo yohlobo lwebhetri ye-N inzima ngakumbi, kodwa ineenzuzo zokuguquguquka okuphezulu, akukho kuncitshiswa kokukhanya, kunye nesiphumo sokukhanya esibuthathaka.

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Ixesha lokuposa: Oct-14-2022